JPH0310595B2 - - Google Patents

Info

Publication number
JPH0310595B2
JPH0310595B2 JP57224547A JP22454782A JPH0310595B2 JP H0310595 B2 JPH0310595 B2 JP H0310595B2 JP 57224547 A JP57224547 A JP 57224547A JP 22454782 A JP22454782 A JP 22454782A JP H0310595 B2 JPH0310595 B2 JP H0310595B2
Authority
JP
Japan
Prior art keywords
single crystal
film
gaas
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57224547A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59116192A (ja
Inventor
Junji Saito
Kazuo Nanbu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22454782A priority Critical patent/JPS59116192A/ja
Publication of JPS59116192A publication Critical patent/JPS59116192A/ja
Publication of JPH0310595B2 publication Critical patent/JPH0310595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22454782A 1982-12-21 1982-12-21 分子線結晶成長方法 Granted JPS59116192A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22454782A JPS59116192A (ja) 1982-12-21 1982-12-21 分子線結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22454782A JPS59116192A (ja) 1982-12-21 1982-12-21 分子線結晶成長方法

Publications (2)

Publication Number Publication Date
JPS59116192A JPS59116192A (ja) 1984-07-04
JPH0310595B2 true JPH0310595B2 (en]) 1991-02-14

Family

ID=16815498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22454782A Granted JPS59116192A (ja) 1982-12-21 1982-12-21 分子線結晶成長方法

Country Status (1)

Country Link
JP (1) JPS59116192A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法
JPS61131526A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JP2607239B2 (ja) * 1985-03-29 1997-05-07 シャープ株式会社 分子線エピタキシヤル装置
JPH0773097B2 (ja) * 1986-05-19 1995-08-02 富士通株式会社 分子線結晶成長方法
JPS6394614A (ja) * 1986-10-09 1988-04-25 Matsushita Electric Ind Co Ltd 分子線結晶成長装置
JP5048033B2 (ja) * 2009-10-01 2012-10-17 旭化成エレクトロニクス株式会社 半導体薄膜素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122697A (en) * 1978-03-16 1979-09-22 Nec Corp Method and apparatus for forming silicon oxide ion
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Also Published As

Publication number Publication date
JPS59116192A (ja) 1984-07-04

Similar Documents

Publication Publication Date Title
JPH0666274B2 (ja) ▲ｉｉｉ▼−ｖ族化合物半導体の形成方法
JPS58130517A (ja) 単結晶薄膜の製造方法
US4470192A (en) Method of selected area doping of compound semiconductors
JPH0310595B2 (en])
JP3214505B2 (ja) 半導体装置の製造方法
JPH0236060B2 (ja) Kagobutsuhandotainoseichohoho
JP2642096B2 (ja) 化合物半導体薄膜の形成方法
JPH05238880A (ja) エピタキシャル成長方法
JP3461819B2 (ja) 半導体結晶膜の製造方法
JP2555885B2 (ja) ゲルマニウム・砒化ガリウム接合の製造方法
JP2961188B2 (ja) Ｓｏｉ基板の作製方法
JPH0787179B2 (ja) 超格子半導体装置の製造方法
KR0138849B1 (ko) Si빔과 Ge빔을 이용한 실리콘 산화막 식각 및 실리콘 게르마늄의 선택적 성장방법
JPS6012775B2 (ja) 異質基板上への単結晶半導体層形成方法
JPS61145823A (ja) 分子線エピタキシ成長法
JPH0620042B2 (ja) ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶のド−ピング方法
JP2577543B2 (ja) 単結晶薄膜成長装置
JPS63148616A (ja) 半導体装置の製造方法
JP2721683B2 (ja) 化合物半導体薄膜結晶の成長方法
JP2861683B2 (ja) アモルファスシリコン膜の形成方法
JP4509244B2 (ja) 半導体素子の製造方法
JPH0243720A (ja) 分子線エピタキシャル成長方法
JP2771635B2 (ja) Ｃａ▲下１▼―▲下ｘ▼Ｓｒ▲下ｘ▼Ｆ▲下２▼膜の形成方法
JP3047523B2 (ja) 選択エピタキシャル成長方法
JPH04345017A (ja) 半導体装置の製造方法